Articles from Teledyne HiRel Semiconductors

Teledyne HiRel Semiconductors, a leader in ruggedized semiconductors for mission-critical environments, today announced the TDLNA0840EP, an ultra-low-power, wideband, low-noise amplifier (LNA) that delivers guaranteed operation to 4.0 GHz, while consuming only tens of milliwatts from a single 1.5-volt supply. With a typical gain of 29 dB and a typical noise figure of 1.5 dB across 0.3–4.0 GHz, the TDLNA0840EP enables significant power savings in space, avionics, and battery-constrained RF systems.

Teledyne HiRel Semiconductors is pleased to announce the release of their industrial-grade embedded MultiMediaCard (eMMC) module. Featuring 128GB of eMMC 5.1-compliant storage in a compact 153-ball FBGA package, this device is engineered to deliver reliable, high-speed performance in harsh environments.

Teledyne HiRel Semiconductors, a leader in ruggedized semiconductors for mission-critical environments, today announced the release of the TDD416Y12NEPBM01, a compact DDR4 memory module, screened and qualified as an Enhanced Product (EP) and rated for operation from –40°C to +105°C.

Teledyne HiRel Semiconductors announces the availability of its latest rad-tolerant wideband 50 GHz RF switch, model TDSW050A2T. This switch operates from true DC to 50 GHz, delivering excellent RF performance down to zero Hertz, making this device ideal for many of today’s complex space and defense applications. It has been developed in a 150nm pseudomorphic High Electron Mobility Transistor (pHEMT) Indium Gallium Arsenide (InGaAs) process and is available in a 1.15 mm x 1.47 mm x 0.1 mm die ideal for hybrid assembly products. It is qualified to an extended temperature range of –40⁰C to 85⁰C per MIL-PRF-38534 Class K equivalency for space applications and is available for immediate shipment.

Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP. This switch offers high peak power and is designed to replace Positive-Intrinsic-Negative (PIN) diode-based RF Switches commonly used in RF front ends of many of today’s tactical and military communication radio systems. Developed using a wide-bandgap GaN High Electron Mobility Transistor (HEMT) process, this switch offers a very high breakdown voltage and high saturation current capabilities and is available in a 16-pin quad-flat no-lead (QFN) 3 mm x 3 mm x 0.8 mm plastic surface mount package and qualified to a military temperature range of –55⁰C to 125⁰C.